Micron announced today that it has launched mass production of advanced NAND flash memory chips in Japan. The new product is based on Micron’s third-generation 64-layer 3D NAND architecture that was originally launched in early 2018.
Micron said the new 3D NAND will enable customers to accelerate their time to market for high-capacity storage products, and raise the bar for performance and reliability.
“We are proud to be the first to introduce an advanced NAND product with our third-generation 128Gb 3D NAND technology,” said Sanjay Mehrotra, chief executive officer at Micron Technology Inc., Our industry-first introduction of this technology is an important milestone in our long-term commitment to meet the rapidly growing demand for flash memory in data centers.”
In order to meet this demand, Micron has invested more than $10 billion since last year into new facilities and equipment at its Boise, Idaho facility; Singapore facility; and Tianjin facility in China.
The company also announced that it has reached another milestone with respect to its roadmap for 3D. Micron has announced that it is launching mass production of its advanced 3D NAND memory chips in Japan. The new technology will be used by a number of manufacturers, including Samsung Electronics and SK Hynix.
